2SD1767 / 2SD1859
Transistors
Medium power transistor (80V, 0.7A)
2SD1767 / 2SD1859
!
Features
1) High breakdown voltage, BV
CEO
=80V, and
high current, I
C
=0.7A.
2) Complements the 2SB1189 / 2SB1238.
!
External dimensions
(Units : mm)
2SD1767
4.0
1.0
2.5
0.5
1.5
0.4
(1)
3.0
!
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
2SD1767
2SD1859
Tj
Tstg
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
80
80
5
0.7
1
0.5
P
C
2
1
150
鈭?5~+150
擄C
擄C
W
鈭?
鈭?
0.5
(3)
V
A(DC)
A(Pulse)
鈭?
0.4
V
V
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
2SD1859
6.8
2.5
鈭?
Pw=10ms, duty=1/2
鈭?
When mounted on a 40脳40脳0.7 mm ceramic board.
鈭?
Printed circuit board 1.7 mm thick, collector plating 1cm
2
or larger.
0.5
(1) (2) (3)
2.54 2.54
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
2SD1767
MPT3
PQR
2SD1859
ATV
QR
鈭?/div>
TV2
2500
鈭?/div>
Denotes
h
DC
鈭?/div>
T100
1000
1.05
14.5
!
Packaging specifications and h
FE
0.65Max.
1.0
0.9
4.4
1.5
0.45
Unit
1.5
0.4
Taping specifications
FE
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
!
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
2SD1767
2SD1859
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
80
80
5
鈭?/div>
鈭?/div>
鈭?/div>
82
120
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
0.2
鈭?/div>
鈭?/div>
120
10
Max.
鈭?/div>
鈭?/div>
鈭?/div>
0.5
0.5
0.4
390
390
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
鈭?/div>
鈭?/div>
MHz
pF
I
C
=50碌A(chǔ)
I
C
=2mA
I
E
=50碌A(chǔ)
V
CB
=50V
V
EB
=4V
I
C
/I
B
=500mA/50mA
V
CE
/I
C
=3V/0.1A
V
CE
=10V,
I
E
=鈭?0mA,
f=100MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
Conditions
DC current transfer ratio
Transition frequency
Output capacitance
4.5
1.6
(2)
2SD1767Q相關(guān)型號(hào)PDF文件下載
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