Power Transistors
2SD1750, 2SD1750A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Complementary to 2SB1180 and 2SB1180A
Unit: mm
7.0鹵0.3
3.0鹵0.2
3.5鹵0.2
s
Features
q
q
q
High foward current transfer ratio h
FE
High-speed switching
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
60
80
60
80
7
12
8
15
1.3
150
鈥?5 to +150
Unit
V
7.2鹵0.3
0.8鹵0.2
1.1鹵0.1
0.85鹵0.1
0.4鹵0.1
1.0鹵0.2
10.0
鈥?.
+0.3
0.75鹵0.1
2.3鹵0.2
4.6鹵0.4
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1750
2SD1750A
2SD1750
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
I Type Package
3.5鹵0.2
2.0鹵0.2
7.0鹵0.3
Unit: mm
0 to 0.15
3.0鹵0.2
7.2鹵0.3
1.0 max.
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
A
A
10.2鹵0.3
2.5
0.75鹵0.1
1.1鹵0.1
0.5 max.
0.9鹵0.1
0 to 0.15
W
1
2
3
藲C
藲C
2.3鹵0.2
4.6鹵0.4
1:Base
2:Collector
3:Emitter
I Type Package (Y)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD1750
2SD1750A
2SD1750
2SD1750A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
I
C
= 4A, I
B1
= 8mA, I
B2
= 鈥?mA
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 8A
I
C
= 4V, I
B
= 8mA
I
C
= 4V, I
B
= 8mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
20
0.5
4
1
60
80
2000
500
1.5
2
V
V
MHz
碌s
碌s
碌s
10000
min
typ
max
100
100
2
Unit
碌A
mA
V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
Q
P
Internal Connection
B
C
Rank
h
FE1
2000 to 5000 4000 to 10000
E
2.5鹵0.2
1.0
2.5鹵0.2
1.0
emitter voltage 2SD1750A
V
1
1
2
3
