Power Transistors
2SD1751
Silicon NPN triple diffusion planar type
Unit: mm
For power amplification
7.2鹵0.3
0.8鹵0.2
7.0鹵0.3
3.0鹵0.2
3.5鹵0.2
Complementary to 2SB1170
s
Features
q
q
10.0
鈥?.
+0.3
1.1鹵0.1
0.85鹵0.1
0.4鹵0.1
q
High forward current transfer ratio h
FE
which has satisfactory
linearity
Low collector to emitter saturation voltage V
CE(sat)
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
60
60
6
4
2
15
1.3
150
鈥?5 to +150
Unit
V
1.0鹵0.2
0.75鹵0.1
2.3鹵0.2
4.6鹵0.4
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
I Type Package
3.5鹵0.2
2.0鹵0.2
7.0鹵0.3
Unit: mm
0 to 0.15
3.0鹵0.2
10.2鹵0.3
7.2鹵0.3
V
A
A
1.0 max.
2.5
0.75鹵0.1
1.1鹵0.1
0.5 max.
0.9鹵0.1
0 to 0.15
W
1
2
3
藲C
藲C
2.3鹵0.2
4.6鹵0.4
1:Base
2:Collector
3:Emitter
I Type Package (Y)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(T
C
=25藲C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
I
C
= 1A, I
B1
= 0.1A, I
B2
= 鈥?0.1A
Conditions
V
CE
= 60V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 0.1A
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 1A
I
C
= 2A, I
B
= 0.2A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
20
0.2
3.5
0.7
60
35
70
250
1.2
2
V
V
MHz
碌s
碌s
碌s
min
typ
max
200
300
1
Unit
碌A
碌A
mA
V
FE2
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE2
2.5鹵0.2
1.0
2.5鹵0.2
V
1.0
1
1
2
