2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
!Features
1) High V
CEO
, V
CEO
=80V
2) High I
C
, I
C
=1A (DC)
3) Good h
FE
linearity
4) Low V
CE
(sat)
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
!
External dimensions
(Units : mm)
2SD1898
0.5鹵0.1
4.5
+0.2
鈭?.1
1.6鹵0.1
1.5
+0.2
鈭?.1
4.0鹵0.3
2.5
+0.2
鈭?.1
(1)
1.0鹵0.2
(2)
(3)
0.4鹵0.1
1.5鹵0.1
0.4
+0.1
鈭?.05
0.4鹵0.1
1.5鹵0.1
0.5鹵0.1
3.0鹵0.2
!
Structure
Epitaxial planer type
NPN silicon transistor
ROHM : MPT3
EIAJ : SC-62
Abbreviated symbol : DF
(1) Base
(2) Collector
(3) Emitter
2SD1733
1.5
鹵
0.3
2SD1768S
4鹵0.2
2鹵0.2
3鹵0.2
5.5
+
0.3
鈭?/div>
0.1
9.5
鹵
0.5
(15Min.)
0.9
1.5
0.75
0.9
0.65
鹵
0.1
2.5
0.45
+0.15
鈭?.05
3Min.
6.5
鹵
0.2
5.1
+
0.2
鈭?/div>
0.1
C0.5
2.3
+
0.2
鈭?/div>
0.1
0.5
鹵
0.1
0.55
鹵
0.1
2.3
鹵
0.2 2.3
鹵
0.2
1.0
鹵
0.2
5
2.5
+0.4
鈭?.1
0.5
0.45
+0.15
鈭?.05
(1) (2) (3)
(1) (2) (3)
Taping specifications
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
2SD1863
6.8鹵0.2
2.5鹵0.2
0.65Max.
1.0
0.5鹵0.1
(1)
(2)
(3)
2.54 2.54
1.05
0.45鹵0.1
Taping specifications
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
14.5鹵0.5
4.4鹵0.2
0.9
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