DATA SHEET
SILICON TRANSISTORS
2SD1615, 2SD1615A
NPN SILICON EPITAXIAL TRANSISTORS
POWER MINI MOLD
DESCRIPTION
2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid
Integrated Circuits.
FEATURES
鈥?World Standard Miniature Package
鈥?Low V
CE (sat)
V
CE(sat)
= 0.15 V
鈥?Complement to 2SB1115, 2SD1115A
PACKAGE DIMENSIONS
in millimeters
4.5
鹵
0.1
1.6
鹵
0.2
1.5
鹵
0.1
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (T
A
= 25擄C)
2SD1615 2SD1615A
Collector to Base Voltage
V
CBO
60
120
50
60
Collector to Emitter Voltage
V
CEO
Emitter to Base Voltage
V
EBO
6
1
Collector Current (DC)
I
C
I
C
2
Collector Current (Pulse)
鈭?/div>
Maximum Power Dissipation
Total Power Dissipation
P
T
2.0
at 25擄C Ambient Temperature
鈭椻垪
Maximum Temperatures
150
Junction Temperature
T
j
Storage Temperature Range
T
stg
鈥?5 to +150
鈭?/div>
鈭椻垪
0.8 MIN.
V
V
V
A
A
W
擄C
擄C
E
0.42
鹵
0.06
C
B
0.42
鹵
0.06
1.5 0.47
鹵
0.06
3.0
1. Emitter
2. Collector
3. Base
0.41
+ 0.03
鈥?0.05
PW
鈮?/div>
10 ms, Duty Cycle
鈮?/div>
50%
When mounted on ceramic substrate of 16 cm
2
脳
0.7 mm
ELECTRICAL CHARACTERISTICS (T
A
= 25
擄
C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
鈭椻垪鈭?/div>
SYMBOL
I
CBO
I
EBO
h
FE1
鈭椻垪鈭?/div>
h
FE2
鈭椻垪鈭?/div>
V
CE(sat)
鈭椻垪鈭?/div>
V
BE(sat)
鈭椻垪鈭?/div>
V
BE
鈭椻垪鈭?/div>
f
T
C
ob
MIN.
TYP.
MAX.
100
100
100
UNIT
nA
nA
nA
2SD1615
2SD1615A
2SC1615
2SD1615A
TEST CONDITIONS
V
CB
= 60 V, I
E
= 0
V
CB
= 120 V, I
E
= 0
V
CE
= 2.0 V, I
C
= 100 mA
V
EB
= 6.0 V, I
C
= 0
135
135
81
290
270
0.15
0.9
600
400
0.3
1.2
700
V
V
mV
MHz
pF
V
CE
= 2.0 V, I
C
= 1.0 A
I
C
= 1.0 A, I
B
= 50 mA
I
C
= 1.0 A, I
B
= 50 mA
V
CE
= 2.0 V, I
C
= 50 mA
V
CE
= 2.0 V, I
E
= 鈥?00 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
600
80
160
19
Pulsed: PW
鈮?/div>
350
碌
s, Duty Cycle
鈮?/div>
2 %
h
FE
Classification
MARKING
h
FE
2SD1615
2SD1615A
GM
GQ
135 to 270
GL
GP
200 to 400
300 to 600
GK
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. D10198EJ4V0DS00 (4th edition)
Date Published December 2000 N CP(K)
Printed in Japan
漏
4.0
鹵
0.25
2.5
鹵
0.1
1985
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