DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD1592
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
FEATURES
鈥?High DC current gain due to Darlington connection
鈥?Low collector saturation
鈥?Reverse deterrence type
鈥?Ideal for use in devices such as pulse motor drivers and relay
drivers of PC terminals, and ignitors of general-purpose engines.
鈥?Mold package that does not require an insulating board or
insulation bushing
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25擄C)
P
T
(Ta = 25擄C)
T
j
T
stg
Ratings
500
+300,
鈭?0
10
5.0
10
0.5
30
1.5
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
(OHFWURGH &RQQHFWLRQ
%DVH
&ROOHFWRU
(PLWWHU
* PW
鈮?/div>
300
碌
s, duty cycle
鈮?/div>
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16137EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
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