DATA SHEET
SILICON TRANSISTOR
2SD1581
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
The 2SD1581 is a single type super high h
FE
transistor and low
collector saturation voltage and low power loss. This transistor is
ideal for use in high current drives such as mortars, relays, and
ramps.
PACKAGE DRAWING (UNIT: mm)
FEATURES
鈥?Ultra high h
FE
h
FE
= 800 to 3200 (@ V
CE
= 5.0 V, I
C
= 500 mA)
鈥?Low collector saturation voltage
V
CE(sat)
= 0.18 V TYP. (@ I
C
= 1.0 A, I
B
= 10 mA)
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
P
T
T
j
T
stg
Ratings
30
25
15
2.0
3.0
1.0
150
鈭?5
to +150
Unit
V
V
V
A
A
W
擄C
擄C
* PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50%
ELECTRICAL CHARACTERISTICS (Ta = 25擄C)
擄
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
BE
V
CE(sat)
V
BE(sat)
C
ob
f
T
Conditions
V
CB
= 30 V, I
E
= 0
V
EB
= 10 V, I
C
= 0
V
CE
= 5.0 V, I
C
= 500 mA
V
CE
= 5.0 V, I
C
= 2.0 mA
V
CE
= 5.0 V, I
C
= 300 mA
I
C
= 1.0 A, I
B
= 10 mA
I
C
= 1.0 A, I
B
= 10 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
E
=
鈭?00
mA
*
*
*
*
*
150
800
400
600
660
0.18
0.83
26
350
700
0.30
1.2
35
1500
MIN.
TYP.
MAX.
100
100
3200
Unit
nA
nA
鈭?/div>
鈭?/div>
mV
V
V
pF
MHz
** Pulse test PW
鈮?/div>
350
碌
s, duty cycle
鈮?/div>
2% per pulsed
h
FE
1
/h
FE
CLASSIFICATION M : 800 to 1600 L : 1200 to 2400 K : 2000 to 3200
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16197EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
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