Transistor
2SD1423, 2SD1423A
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1030 and 2SB1030A
Unit: mm
4.0鹵0.2
3.0鹵0.2
s
Features
q
q
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1423
2SD1423A
2SD1423
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
(Ta=25藲C)
0.7鹵0.1
2.0鹵0.2
marking
1
2
3
30
60
25
50
7
1
0.5
300
150
鈥?5 ~ +150
V
emitter voltage 2SD1423A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
A
A
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
1.27 1.27
2.54鹵0.15
EIAJ:SC鈥?2
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SD1423
2SD1423A
2SD1423
2SD1423A
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 10V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
200
6
*2
+0.2
0.45鈥?.1
Ratings
Unit
15.6鹵0.5
Optimum for high-density mounting.
Allowing supply with the radial taping.
min
typ
max
0.1
1
Unit
碌A(chǔ)
碌A(chǔ)
V
30
60
25
50
7
85
40
0.6
340
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
V
MHz
15
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
1
2
3
