Transistor
2SD1350, 2SD1350A
Silicon NPN triple diffusion planer type
For high breakdown voltage switching
s
q
q
q
q
q
Unit: mm
Features
High collector to base voltage V
CBO
.
High collector to emitter voltage V
CEO
.
Large collector power dissipation P
C
.
Low collector to emitter saturation voltage V
CE(sat)
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
(Ta=25藲C)
Ratings
400
600
400
500
5
1
500
*
6.9鹵0.1
1.5
0.4
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
1.5 R0.9
R0.9
1.0鹵0.1
0.85
Parameter
Collector to
base voltage
Collector to
2SD1350
2SD1350A
2SD1350
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Unit
0.55鹵0.1
0.45鹵0.05
1.25鹵0.05
V
3
2
1
emitter voltage 2SD1350A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
V
V
A
mA
W
藲C
藲C
1:Base
2:Collector
3:Emitter
2.5
2.5
1
150
鈥?5 ~ +150
EIAJ:SC鈥?1
M Type Mold Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector to base
voltage
Collector to emitter
voltage
2SD1350
2SD1350A
2SD1350
2SD1350A
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
f
t
stg
Conditions
I
C
= 100碌A(chǔ), I
E
= 0
I
C
= 500碌A(chǔ), I
B
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CE
= 5V, I
C
= 30mA
I
C
= 250mA, I
B
= 50mA
*
I
C
= 250mA, I
B
= 50mA
*
V
CB
= 30V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
V
CC
= 200V, I
C
= 100mA
I
B1
= 10mA, I
B2
= 鈥?0mA
V
CC
= 200V, I
C
= 100mA
I
B1
= 10mA, I
B2
= 鈥?0mA
V
CC
= 200V, I
C
= 100mA
I
B1
= 10mA, I
B2
= 鈥?0mA
0.4
1.0
0.7
1.0
3.6
4.0
*
min
400
600
400
500
5
30
typ
max
4.1鹵0.2
s
Absolute Maximum Ratings
R
0.
4.5鹵0.1
7
Unit
V
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
2SD1350
2SD1350A
2SD1350
2SD1350A
2SD1350
2SD1350A
1.5
1.5
55
7
V
V
MHz
pF
碌s
碌s
碌s
Fall time
Storage time
Pulse measurement
1
1
2
