Transistor
2SD1330
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
0.4
Unit: mm
6.9鹵0.1
1.5
1.5 R0.9
R0.9
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
2.5鹵0.1
1.0
1.0
q
q
q
R
0.
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
25
20
12
1
0.5
600
150
鈥?5 ~ +150
Unit
V
V
V
A
A
mW
藲C
藲C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
1
EIAJ:SC鈥?1
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
*1
h
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
BE(sat)
f
T
C
ob
R
on*3
*3
R
on
Conditions
V
CB
= 25V, I
C
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 50mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
typ
1.25鹵0.05
Low collector to emitter saturation voltage V
CE(sat)
.
Low ON resistance R
on
.
High foward current transfer ratio h
FE
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0鹵0.1
0.85
0.55鹵0.1
0.45鹵0.05
max
100
4.1鹵0.2
4.5鹵0.1
s
Features
7
Unit
nA
V
V
V
25
20
12
200
60
0.13
0.4
1.2
200
10
1.0
*2
800
V
V
MHz
pF
鈩?/div>
Pulse measurement
FE1
Rank classification
R
200 ~ 350
S
300 ~ 500
T
400 ~ 800
Measurement circuit
1k鈩?/div>
Rank
h
FE1
I
B
=1mA
f=1kHz
V=0.3V
V
B
V
V
V
A
R
on
=
V
B
!1000(鈩?
V
A
鈥揤
B
1
1
2
3
