Power Transistors
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
10.0鹵0.3
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
Unit: mm
1.0鹵0.1
s
Features
q
q
q
High foward current transfer ratio h
FE
Satisfactory linearity of foward current transfer ratio h
FE
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
80
100
60
80
6
6
3
1
40
1.3
150
鈥?5 to +150
Unit
V
1.5鹵0.1
1.5max.
1.1max.
10.5min.
2.0
0.8鹵0.1
0.5max.
2.54鹵0.3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1259
2SD1259A
2SD1259
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25擄C
P
C
T
j
T
stg
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
8.5鹵0.2
6.0鹵0.3
1.5
鈥?.4
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Junction temperature
Storage temperature
A
2.0
3.0
鈥?.2
A
A
4.4鹵0.5
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08鹵0.5
W
1
2
3
藲C
藲C
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff
current
2SD1259
2SD1259A
(T
C
=25藲C)
Symbol
I
CES
I
CEO
I
EBO
Conditions
V
CE
= 80V, I
E
= 0
V
CE
= 100V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
CB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
50
60
80
500
2500
1
V
MHz
min
typ
max
100
100
100
100
Unit
碌A
碌A
碌A
V
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SD1259
2SD1259A
V
CEO
h
FE*
V
CE(sat)
f
T
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
*
h
FE
Rank classification
Q
P
O
h
FE
500 to 1000 800 to 1500 1200 to 2500
Rank
Note: Ordering can be made by the common rank (PQ rank h
FE
= 500 to 1500) in the rank classification.
4.4鹵0.5
14.7鹵0.5
Emitter to base voltage
V
10.0鹵0.3
emitter voltage 2SD1259A
V
+0.4
+0
1
1
2
