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2SD1253 Datasheet

  • 2SD1253

  • Silicon NPN triple diffusion planar type(For power amplifica...

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  • PANASONIC

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Power Transistors
2SD1253, 2SD1253A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB930 and 2SB930A
10.0鹵0.3
Unit: mm
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
1.0鹵0.1
s
Features
q
q
q
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
60
80
60
80
5
8
4
40
1.3
150
鈥?5 to +150
Unit
V
1.5鹵0.1
1.5max.
10.5min.
2.0
1.1max.
0.8鹵0.1
0.5max.
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1253
2SD1253A
2SD1253
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
2.54鹵0.3
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
8.5鹵0.2
6.0鹵0.3
emitter voltage 2SD1253A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
14.7鹵0.5
4.4鹵0.5
0 to 0.4
1.5
鈥?.4
V
A
A
W
藲C
藲C
10.0鹵0.3
4.4鹵0.5
2.0
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD1253
2SD1253A
2SD1253
2SD1253A
2SD1253
2SD1253A
(T
C
=25藲C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 3A
I
C
= 4A, I
B
= 0.4A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 0.4A, I
B2
= 鈥?0.4A,
V
CC
= 50V
20
0.4
1.2
0.5
60
80
40
15
2
1.5
V
V
MHz
碌s
碌s
碌s
250
min
typ
max
400
400
700
700
1
Unit
碌A
碌A
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
R
40 to 90
Q
70 to 150
P
120 to 250
Rank
h
FE1
3.0
鈥?.2
+0.4
+0
1

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