Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
1.5鹵0.1
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
Unit: mm
1.0鹵0.1
s
Features
q
q
10.5min.
Wide area of safe operation (ASO)
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
60
80
60
80
8
6
4
1
30
1.3
150
鈥?5 to +150
Unit
V
10.0鹵0.3
1.5max.
1.1max.
2.0
0.8鹵0.1
0.5max.
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1251
2SD1251A
2SD1251
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25擄C
P
C
T
j
T
stg
2.54鹵0.3
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
emitter voltage 2SD1251A
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Junction temperature
Storage temperature
V
V
8.5鹵0.2
6.0鹵0.3
1.5
鈥?.4
A
2.0
3.0
鈥?.2
A
W
4.4鹵0.5
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08鹵0.5
藲C
藲C
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
2SD1251
2SD1251A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO(sus)*2
h
FE1
h
FE2*1
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= 20V, I
E
= 0
V
EB
= 8V, I
C
= 0
I
C
= 0.2A, L = 25mH
V
CE
= 3V, I
C
= 0.1A
V
CE
= 3V, I
C
= 1A
V
CE
= 3V, I
C
= 1A
I
C
= 2A, I
B
= 0.4A
V
CE
= 10V, I
C
= 0.2A, f = 0.5MHz
*2
V
CEO(sus)
min
typ
max
30
1
4.4鹵0.5
Unit
碌A(chǔ)
mA
V
60
80
40
30
160
1.2
1
1
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
*1
h
FE2
V
V
MHz
Rank classification
Q
30 to 60
P
50 to 100
O
80 to 160
Test circuit
X I
C
(A)
0.2
L 25mH
Rank
h
FE2
50/60Hz mercury relay
120鈩?/div>
6V
Y
1鈩?/div>
15V
G
0.1
60/80
V
CE
(V)
Note: Ordering can be made by the common rank (OP rank h
FE2
= 50 to 160) in the rank classification.
14.7鹵0.5
A
10.0鹵0.3
+0.4
+0
1
1
2
3
