Power Transistors
2SD1249, 2SD1249A
Silicon NPN triple diffusion planar type
Unit: mm
For low-freauency power amplification
10.0鹵0.3
1.5鹵0.1
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
1.0鹵0.1
s
Features
q
q
10.5min.
High collector to base voltage V
CBO
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
1.5max.
2.0
1.1max.
0.8鹵0.1
0.5max.
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1249
2SD1249A
2SD1249
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
2.54鹵0.3
5.08鹵0.5
Ratings
350
400
250
300
5
1.5
0.75
35
1.3
150
鈥?5 to +150
Unit
V
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
8.5鹵0.2
emitter voltage 2SD1249A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
10.0鹵0.3
6.0鹵0.3
V
A
A
W
1.5
鈥?.4
2.0
3.0
鈥?.2
4.4鹵0.5
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08鹵0.5
藲C
藲C
1
2
3
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD1249
2SD1249A
2SD1249
2SD1249A
2SD1249
2SD1249A
1:Base
2:Collector
3:Emitter
N Type Package (DS)
(T
C
=25藲C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 350V, V
BE
= 0
V
CE
= 400V, V
BE
= 0
V
CE
= 150V, I
B
= 0
V
CE
= 200V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 10V, I
C
= 0.3A
V
CE
= 10V, I
C
= 1A
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
V
CE
= 10V, I
C
= 0.2A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= 鈥?0.1A,
V
CC
= 50V
30
0.5
2
0.5
250
300
40
10
1.5
1
V
V
MHz
碌s
碌s
碌s
250
min
typ
max
1
1
1
1
1
Unit
mA
4.4鹵0.5
14.7鹵0.5
+0.4
+0
mA
mA
V
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
R
40 to 90
Q
70 to 150
P
120 to 250
Rank
h
FE1
1
1
2
