Transistor
2SD1244
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
6.9鹵0.1
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
s
Features
q
q
1.5
0.4
1.5 R0.9
R0.9
0.85
0.55鹵0.1
0.45鹵0.05
1.25鹵0.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25藲C)
Ratings
40
20
7
8
5
Unit
V
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
*
2.5
2.5
V
V
A
A
W
藲C
藲C
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?1
M Type Mold Package
1
150
鈥?5 ~ +150
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
*2
min
typ
max
0.1
0.1
4.1鹵0.2
q
Low collector to emitter saturation voltage V
CE(sat)
.
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.0鹵0.1
R
0.
4.5鹵0.1
7
Unit
碌A(chǔ)
碌A(chǔ)
V
V
20
7
230
150
1
150
50
600
V
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
230 ~ 380
R
340 ~ 600
Rank
h
FE1
1
1
2
3
