Transistor
2SD1199
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9鹵0.1
1.5
2.5鹵0.1
1.0
s
q
q
q
q
q
Features
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
High emitter to base voltage V
EBO
.
Low noise voltage NV.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.5 R0.9
R0.9
0.4
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
1.0
0.45鹵0.05
1
1.0鹵0.1
R
0.
0.85
0.55鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
3
2
(Ta=25藲C)
Ratings
50
40
15
100
50
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Collector
3:Emitter
2.5
2.5
EIAJ:SC鈥?1
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
50
40
15
400
0.05
120
80
2000
0.2
V
MHz
mV
min
typ
max
100
1
Unit
nA
碌A(chǔ)
V
V
V
*
h
FE
Rank classification
R
400 ~ 800
S
T
h
FE
600 ~ 1200 1000 ~ 2000
Rank
1.25鹵0.05
4.1鹵0.2
4.5鹵0.1
7
1
1
2
3
