鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
3.0
鹵0.15
45藲
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Peak collector current
Collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
120
120
5
1
0.5
1
150
鈭?5
to
+150
Unit
V
V
V
A
A
W
擄C
擄C
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Marking Symbol: V
Note) *: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion.
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CEO
V
EBO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
=
100
碌A(chǔ),
I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
5 V, I
C
=
500 mA
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
120
5
130
50
0.2
0.85
120
20
0.6
1.20
V
V
MHz
pF
330
Typ
Max
Unit
V
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
R
130 to 220
S
185 to 330
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJC00202DED
0.4 max.
2.6
鹵0.1
1
1
2
3
