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2SD0946B Datasheet

  • 2SD0946B

  • For Low-Frequency Amplification

  • 69.22KB

  • 3頁

  • PANASONIC

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Power Transistors
2SD0946
(2SD946)
, 2SD0946A
(2SD946A)
,
2SD0946B
(2SD946B)
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
鈻?/div>
Features
鈥?/div>
Forward current transfer ratio h
FE
is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
鈥?/div>
A shunt resistor is omitted from the driver.
蠁
3.16
鹵0.1
8.0
+0.5
鈥?.1
Unit: mm
3.2
鹵0.2
3.8
鹵0.3
11.0
鹵0.5
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SD0946
2SD0946A
2SD0946B
Collector-emitter voltage 2SD0946
(Base open)
2SD0946A
2SD0946B
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V
EBO
I
C
I
CP
P
C
T
j
T
stg
V
CEO
Symbol
V
CBO
Rating
30
60
100
25
50
80
5
1
1.5
1.2
150
鈭?5
to
+150
V
A
A
W
擄C
擄C
B
1
2
3
0.75
鹵0.1
1.9
鹵0.1
Unit
V
0.5
鹵0.1
0.5
鹵0.1
2.3
鹵0.2
1.76
鹵0.1
V
4.6
鹵0.2
16.0
鹵1.0
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Internal Connection
C
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage
(Emitter open)
2SD0946
2SD0946A
2SD0946B
Collector-emitter voltage
(Base open)
2SD1263
2SD0946A
2SD0946B
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
*1
鈮?/div>
200
鈩?/div>
E
Symbol
V
CBO
Conditions
I
C
=
100
碌A(chǔ),
I
E
=
0
Min
30
60
100
Typ
Max
3.05
鹵0.1
Unit
V
V
CEO
I
C
=
1 mA, I
B
=
0
25
50
80
V
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
I
E
=
100
碌A(chǔ),
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
10 V, I
C
=
1 A
I
C
=
1 A, I
B
=
1 mA
I
C
=
1 A, I
B
=
1 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
5
0.1
0.1
4 000
40 000
1.8
2.2
150
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
V
MHz
Collector-emitter saturation voltage
Base-emitter saturation voltage
*1
Transition frequency
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
R
S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Note) The part numbers in the parenthesis show conventional part number.
Publication date: May 2003
SJD00164BED
1

2SD0946B 產(chǎn)品屬性

  • 2SD0946B View All Specifications

  • 1,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN - 達(dá)林頓

  • 1A

  • 80V

  • 1.8V @ 1mA，1A

  • -

  • 4000 @ 1A，10V

  • 1.2W

  • 150MHz

  • 通孔

  • TO-225AA，TO-126-3

  • TO-126B-A1

  • 散裝

  • 2SD946B2SD946B-ND

2SD0946B相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Transistor
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC
  • 英文版
    TRANSISTOR (NPN)
    金譽(yù)
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC ...
  • 英文版
    For Medium-Power General Amplification
    PANASONIC
  • 英文版
    For Medium-Power General Amplification
    PANASONIC ...
  • 英文版
    Transistor
  • 英文版
    For High Breakdown Voltage General Amplification
    PANASONIC
  • 英文版
    For High Breakdown Voltage General Amplification
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planer type(For high breakdown voltage...
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planer type(For high breakdown voltage...
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC ...
  • 英文版
    For Low-Frequency Power Amplification
    PANASONIC
  • 英文版
    For Low-Frequency Power Amplification
    PANASONIC ...
  • 英文版
    For Low-Frequency Amplification
    PANASONIC
  • 英文版
    For Low-Frequency Amplification
    PANASONIC ...
  • 英文版
    For Low-Frequency And Low-Noise Amplification
    PANASONIC

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