鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
=
10
碌A,
I
E
=
0
I
C
=
100
碌A,
I
B
=
0
I
E
=
10
碌A,
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
= 10 V, I
C
= 150 mA
V
CE
= 50 V, I
C
= 500 mA
I
C
=
300 mA, I
B
=
30 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
130
50
100
0.2
0.85
120
11
20
0.4
1.2
V
V
MHz
pF
Min
80
80
5
0.1
330
Typ
Max
Unit
V
V
V
碌A
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
R
130 to 220
S
185 to 330
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002
SJC00198CED
3藲
0.4
鹵0.04
1
1
2
3
