鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SD0874
2SD0874A
2SD0874
2SD0874A
V
EBO
I
CBO
h
FE1 *2
h
FE2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
500 mA
V
CE
=
5 V, I
C
=
1 A
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
85
50
0.2
0.85
200
20
0.4
1.2
V
V
MHz
pF
V
CEO
I
C
=
2 mA, I
B
=
0
Symbol
V
CBO
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
Min
30
60
25
50
5
0.1
340
V
碌A(chǔ)
錚?/div>
V
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: November 2002
SJC00197CED
0.4 max.
2.6
鹵0.1
1
1
2
3
