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2SD0662 Datasheet

  • 2SD0662

  • For High Breakdown Voltage General Amplification

  • 3頁(yè)

  • PANASONIC

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Transistors
2SD0662, 2SD0662B
(2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
6.9
鹵0.1
2.5
鹵0.1
(1.0)
Unit: mm
(0.4)
(1.5)
2.0
鹵0.2
鈥?/div>
High collector-emitter voltage (Base open) V
CEO
鈥?/div>
High transition frequency f
T
鈥?/div>
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
3.5
鹵0.1
(1.0)
2.4
鹵0.2
0.45
鹵0.05
1
鈻?/div>
Features
(1.5)
R 0.9
R 0.7
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage
(Emitter open)
2SD0662
2SD0662B
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Symbol
V
CBO
Rating
250
400
200
400
5
70
600
150
鈭?5
to
+150
V
mA
mW
擄C
擄C
V
Unit
V
1.0
鹵0.1
(0.85)
Collector-emitter voltage 2SD0662
(Base open)
2SD0662B
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
3
(2.5)
2
(2.5)
1.25
鹵0.05
0.55
鹵0.1
1: Base
2: Collector
3: Emitter
M-A1 Package
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage
(Base open)
2SD0662
2SD0662B
V
EBO
I
CEO
h
FE *
V
CE(sat)
f
T
C
ob
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CE
=
100 V, I
B
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
50 mA, I
B
=
5 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
50
30
Symbol
V
CEO
Conditions
I
C
=
100
碌A(chǔ),
I
B
=
0
Min
200
400
5
2
220
1.2
V
碌A(chǔ)
錚?/div>
V
MHz
pF
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
P
30 to 100
Q
60 to 150
R
100 to 220
Note) The part numbers in the parenthesis show conventional part number.
Publication date: November 2002
SJC00195BED
4.1
鹵0.2
4.5
鹵0.1
1

2SD0662相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Transistor
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC
  • 英文版
    TRANSISTOR (NPN)
    金譽(yù)
  • 英文版
    Silicon NPN epitaxial planer type
    PANASONIC ...
  • 英文版
    For Medium-Power General Amplification
    PANASONIC
  • 英文版
    For Medium-Power General Amplification
    PANASONIC ...
  • 英文版
    Transistor
  • 英文版
    For High Breakdown Voltage General Amplification
    PANASONIC
  • 英文版
    For High Breakdown Voltage General Amplification
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planer type(For high breakdown voltage...
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planer type(For high breakdown voltage...
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC ...
  • 英文版
    For Low-Frequency Power Amplification
    PANASONIC
  • 英文版
    For Low-Frequency Power Amplification
    PANASONIC ...
  • 英文版
    For Low-Frequency Amplification
    PANASONIC
  • 英文版
    For Low-Frequency Amplification
    PANASONIC ...
  • 英文版
    For Low-Frequency And Low-Noise Amplification
    PANASONIC

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