鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
CEO
h
FE1
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
t
on
t
stg
t
f
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
CE
=
2 V, I
C
=
1 A
V
CE
=
2 V, I
C
=
5 A
I
C
=
5 A, I
B
=
0.25 A
I
C
=
5 A, I
B
=
0.25 A
I
C
=
4 A
I
B1
=
400 mA, I
B2
= 鈭?00
mA
V
CC
=
50 V
0.2
0.5
0.10
80
50
1.2
1.7
0.5
1.0
0.15
V
V
碌s
碌s
碌s
Min
60
100
100
280
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00287AED
1
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