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DATA SHEET

NPN SILICON RF TRANSISTOR

2SC5750

NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)

4-PIN SUPER MINIMOLD

FEATURES

鈥?Ideal for medium output power amplification

鈥?P

O (1 dB)

= 15.0 dBm TYP. @ V

CE

= 2.8 V, f = 1.8 GHz, P

in

= 1 dBm

鈥?HFT3 technology (f

T

= 12 GHz) adopted

鈥?High reliability through use of gold electrodes

鈥?4-pin super minimold package

ORDERING INFORMATION

Part Number

2SC5750

2SC5750-T1

Quantity

50 pcs (Non reel)

3 kpcs/reel

Supplying Form

鈥?8 mm wide embossed taping

鈥?Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape

Remark

To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

A

= +25擄C)

擄

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

tot

Note

Ratings

9.0

6.0

2.0

50

200

150

鈭?5

to +150

Unit

V

V

V

mA

mW

擄C

擄C

T

j

T

stg

2

Note

Mounted on 1.08 cm

脳

1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15656EJ1V0DS00 (1st edition)

Date Published July 2001 NS CP(K)

Printed in Japan

漏

2001

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