Transistor
2SC5419
Silicon NPN triple diffusion planer type
For low-frequency output amplification
Unit: mm
6.9鹵0.1
0.15
1.05 2.5鹵0.1
鹵0.05
(1.45)
0.8
0.5
4.5鹵0.1
0.7
4.0
s
Features
q
q
q
0.65 max.
1.0 1.0
High collector to emitter voltage V
CEO
.
High transition frequency f
T
.
Allowing supply with the radial taping.
0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*1
(Ta=25藲C)
Ratings
300
300
7
100
70
1.0
150
鈥?5 ~ +150
Unit
0.45
鈥?.05
0.45
鈥?.05
+0.1
+0.1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*1
T
j
T
stg
2.5鹵0.5
1
2
2.5鹵0.5
3
V
V
mA
mA
W
藲C
藲C
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2.5鹵0.1
V
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CEO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= 120V, I
B
= 0
I
C
= 100碌A(chǔ), I
B
= 0
I
E
= 1碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
50
10
300
7
30
220
1.2
V
MHz
pF
min
typ
max
1
Unit
碌A(chǔ)
V
V
*1
h
FE
Rank classification
P
30 ~ 100
Q
60 ~ 150
R
100 ~ 220
Rank
h
FE
14.5鹵0.5
1
1
2
