Transistor
2SC5379
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Unit: mm
1.6鹵0.15
s
Features
q
q
q
q
0.4
0.8鹵0.1
0.4
0.2
鈥?.05
0.15
鈥?.05
+0.1
Low noise figure NF.
High gain.
High transition frequency f
T
.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
1.6鹵0.1
1.0鹵0.1
0.5
1
0.5
3
2
0.45鹵0.1 0.3
0.75鹵0.15
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
8
2
80
125
125
鈥?5 ~ +125
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?5
SS鈥揗ini Type Package
Marking symbol :
HT
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Noise figure
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE*
f
T
C
ob
| S
21e
|
2
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 10mA, f = 2GHz
V
CB
= 5V, I
E
= 0, f = 1MHz
V
CE
= 5V, I
C
= 10mA, f = 1GHz
V
CE
= 5V, I
C
= 3mA, f = 1GHz
8.5
80
7.0
0.6
11.0
1.6
2
1.0
min
typ
max
1
1
200
GHz
pF
dB
dB
Unit
碌A(chǔ)
碌A(chǔ)
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
Q
80 ~ 115
HTQ
R
95 ~ 155
HTR
S
135 ~ 200
HTS
0 to 0.1
s
Absolute Maximum Ratings
(Ta=25藲C)
0.2鹵0.1
+0.1
1
1
2
3
