Transistor
2SC5346
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1982
6.9鹵0.1
0.15
Unit: mm
1.05 2.5鹵0.1
鹵0.05
(1.45)
0.8
0.5
4.5鹵0.1
0.45
鈥?.05
2.5鹵0.1
0.7
4.0
s
Features
q
q
q
Satisfactory linearity of forward current transfer ratio h
FE
.
High collector to emitter voltage V
CEO
.
Small collector output capacitance C
ob
.
0.65 max.
1.0 1.0
0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*1
(Ta=25藲C)
Ratings
150
150
5
100
50
1.0
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
W
藲C
藲C
0.45
鈥?.05
+0.1
+0.1
2.5鹵0.5
2.5鹵0.5
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*1
T
j
T
stg
1
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Noise voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
NV
f
T
C
ob
Conditions
V
CB
= 100V, I
E
= 0
I
C
= 0.1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 30mA, I
B
= 3mA
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
150
160
5
150
5
130
330
1
300
V
mV
MHz
pF
min
typ
max
1
Unit
碌A(chǔ)
V
V
*1
h
FE
Rank classification
R
130 ~ 220
S
185 ~ 330
Rank
h
FE
14.5鹵0.5
1
1
2
