Transistor
2SC5335(Tentative)
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
6.9鹵0.1
0.15
1.05 2.5鹵0.1
鹵0.05
(1.45)
0.8
0.5
4.5鹵0.1
0.7
4.0
s
Features
q
q
0.65 max.
1.0 1.0
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*1
(Ta=25藲C)
Ratings
60
50
15
1.5
0.7
1.0
150
鈥?5 ~ +150
Unit
0.45
鈥?.05
0.45
鈥?.05
+0.1
+0.1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*1
T
j
T
stg
2.5鹵0.5
1
2
2.5鹵0.5
3
V
V
A
A
W
藲C
藲C
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2.5鹵0.1
V
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 150mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
60
50
15
400
0.15
200
11
15
2000
0.4
V
MHz
pF
min
typ
max
1
10
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
*1
h
FE
Rank classification
R
400 ~ 800
S
T
Rank
h
FE
600 ~ 1200 1000 ~ 2000
14.5鹵0.5
1
1
2
