Power Transistors
2SC5223
Silicon NPN triple diffusion planar type
Unit: mm
For high-speed switching
7.3鹵0.1
1.8鹵0.1
6.5鹵0.1
5.3鹵0.1
4.35鹵0.1
2.3鹵0.1
0.5鹵0.1
2.5鹵0.1
0.8max
0.93鹵0.1
1.0鹵0.1
0.1鹵0.05
0.5鹵0.1
q
q
High collector to base voltage V
CBO
High collector to emitter V
CEO
0.75鹵0.1
2.3鹵0.1
4.6鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25擄C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
500
500
7
2.0
1.0
10
150
鈥?5 to +150
Unit
V
V
V
A
A
2.3
1
2
3
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
6.5鹵0.2
5.35
4.35
1.8
0.75
2.3
W
藲C
藲C
1
2
3
0.6
0.5鹵0.1
2.3鹵0.1
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
Conditions
V
CB
= 400V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 100碌A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 5V, I
C
= 50mA
V
CE
= 5V, I
C
= 330mA
I
C
= 330mA, I
B
= 33mA
I
C
= 330mA, I
B
= 33mA
500
500
7
100
100
min
typ
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?3
U Type Package (Z)
max
100
10
6.0
5.5鹵0.2
13.3鹵0.3
1.0鹵0.2
s
Features
Unit
碌A
碌A
V
V
V
1.0
1.5
V
V
1
1
2
