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DATA SHEET

SILICON TRANSISTOR

2SC5194

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

FEATURES

鈥?Low Voltage Operation, Low Phase Distortion

鈥?Low Noise

NF = 1.5 dB TYP. @V

CE

= 3 V, I

C

= 7 mA, f = 2 GHz

鈥?Large Absolute Maximum Collector Current

鈥?4-Pin Compact Mini Mold Package

PACKAGE DRAWINGS

(Unit: mm)

2.1鹵0.2

0.3

鈥?.05

+0.1

NF = 1.7 dB TYP. @V

CE

= 1 V, I

C

= 3 mA, f = 2 GHz

I

C

= 100 mA

2.0鹵0.2

1.25鹵0.1

(1.25)

0.60 0.65

+0.1

ORDERING INFORMATION

PART NUMBER

2SC5194-T1

QUANTITY

3 Kpcs/Reel

PACKING STYLE

Embossed tape 8 mm wide.

Pin 3 (Base), Pin 4 (Emitter) face to perforation

side of the tape.

Embossed tape 8 mm wide.

Pin 1 (Collector), Pin 2 (Emitter) face to

perforation side of the tape.

0.4

鈥?.05

0.9鹵0.1

0.3

2SC5194-T2

3 Kpcs/Reel

Remark

If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

擄C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

RATING

9

6

2

100

150

150

鈥?5 to +150

UNIT

V

V

V

mA

mW

藲C

藲C

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

Document No. P10397EJ2V0DS00 (2nd edition)

(Previous No. TD-2487)

Date Published August 1995 P

Printed in Japan

漏

0 to 0.1

0.15

鈥?.05

+0.1

0.3

鈥?.05

1

4

+0.1

(1.3)

0.3

鈥?.05

+0.1

2

3

T88

1994

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