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DATA SHEET

SILICON TRANSISTOR

2SC5191

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

FEATURES

鈥?Low Voltage Operation, Low Phase Distortion

鈥?Low Noise

NF = 1.5 dB TYP. @ V

CE

= 3 V, I

C

= 7 mA, f = 2 GHz

NF = 1.7 dB TYP. @ V

CE

= 1 V, I

C

= 3 mA, f = 2 GHz

鈥?Large Absolute Maximum Collector Current

2.9鹵0.2

PACKAGE DRAWINGS

(Unit: mm)

2.8鹵0.2

0.4

+0.1

鈭?.05

1.5

0.65

+0.1

鈭?.15

0.95

I

C

= 100 mA

鈥?Mini Mold Package

EIAJ: SC-59

2

T88

0.95

ORDERING INFORMATION

PART

NUMBER

2SC5191-T1

0.3

Marking

0.16

+0.1

鈭?.06

QUANTITY

3 Kpcs/Reel

PACKING STYLE

Embossed tape 8 mm wide.

Pin 3 (collector) face to perforation side of the tape.

Embossed tape 8 mm wide.

Pin 1 (Emitter), Pin 2 (Base) face to perforation side

of the tape.

1.1 to

1.4

2SC5191-T2

3 Kpcs/Reel

Remark

If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

擄C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

RATING

9

6

2

100

200

150

鈭?5

to +150

UNIT

V

V

V

mA

mW

擄C

擄C

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

Document No. P10395EJ2V1DS00 (2nd edition)

Date Published March 1997 N

Printed in Japan

漏

0 to 0.1

0.4

+0.1

鈭?.05

1

3

1994

next

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