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DATA SHEET

SILICON TRANSISTOR

2SC5184

NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD

PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

鈥?Low Noise

鈥?NF = 1.3 dB

鈥?NF = 1.3 dB

TYP.

TYP.

PACKAGE DIMENSIONS

@ V

CE

= 2 V, I

C

= 3 mA, f = 2 GHz

@ V

CE

= 1 V, I

C

= 3 mA, f = 2 GHz

(Units: mm)

2.1 鹵 0.1

1.25 鹵 0.1

鈥?Super Mini-Mold package

EIAJ: SC-70

2.0 鹵 0.2

0.3

+0.1

鈥?

0.65 0.65

ORDERING INFORMATION

PART

NUMBER

2SC5184-T1

2

T86

3 000 units/reel

Embossed tape, 8 mm wide,

Pin No. 3 (collector)

0.9 鹵 0.1

Pins No. 1 (emitter) and No. 2 (base)

facing the perforations

evaluation (available in batches of 50).

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

5

3

2

30

90

150

鈥?5 to +150

V

V

V

mA

mW

藲

C

藲

C

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

Caution;

This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12108EJ2V0DS00 (2nd edition)

(Previous No. TC-2481)

Date Published November 1996 N

Printed in Japan

0 to 0.1

Remark:

Contact your NEC sales representative to order samples for

漏

0.15

+0.1

鈥?.05

2SC5184-T2

3 000 units/reel

Embossed tape, 8 mm wide,

0.3

facing the perforations

Marking

0.3

+0.1

鈥?

QUANTITY

ARRANGEMENT

1

3

1994

next

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