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DATA SHEET

SILICON TRANSISTOR

2SC5181

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

鈥?Low current consumption and high gain

|S

21e

|

2

= 10.5 dB

TYP.

@ V

CE

= 2 V, I

C

= 7 mA, f = 2 GHz

|S

21e

|

2

= 9.0 dB

TYP.

@V

CE

= 1 V, I

C

= 5 mA, f = 2 GHz

鈥?Ultra Super Mini-Mold package

PACKAGE DIMENSIONS

(Units: mm)

1.6 鹵 0.1

0.8 鹵 0.1

2

1.6 鹵 0.1

0.2

+0.1

鈥?

0.5

0.3

+0.1

鈥?

0.15

+0.1

鈥?.05

ORDERING INFORMATION

PART

NUMBER

2SC5181

2SC5181-T1

QUANTITY

50 units/box

3 000 units/reel

ARRANGEMENT

Embossed tape, 8 mm wide, pin No. 3

(collector) facing the perforation

1.0

84

0.5

3

1

* Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

0.75 鹵 0.05

0.6

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

擄

C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

5

3

2

10

30

150

鈥?5 to +150

V

V

V

mA

mW

擄C

擄C

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

Caution;

This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12105EJ2V0DS00 (2nd edition)

(Previous No. TC-2478)

Date Published November 1996 N

Printed in Japan

0 to 0.1

漏

1994

next

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