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DATA SHEET

SILICON TRANSISTOR

2SC5178

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

鈥?Low current consumption and high gain

|S

21e

|

2

= 11.5 dB TYP. @ V

CE

= 2 V, I

C

= 7 mA, f = 2 GHz

|S

21e

|

2

= 10.5 dB TYP. @ V

CE

= 1 V, I

C

= 5 mA, f = 2 GHz

0.4

鈥?.05

+0.1

PACKAGE DIMENSIONS

(Units: mm)

0.4

鈥?.05

0.16

+0.1

鈥?.06

EIAJ: SC-61

2.9鹵0.2

(1.8)

0.850.95

2

PART

NUMBER

2SC5178-T1

0.6

鈥?.05

1

4

5擄

0 to 0.1

5擄

QUANTITY

3000 units/reel

ARRANGEMENT

+0.1

Embossed tape, 8 mm wide, pins

No. 3 (base) and No. 4 (emitter) facing

the perforations

0.8

5擄

1.1

鈥?.1

+0.2

2SC5178-T2

3000 units/reel

Embossed tape, 8 mm wide, pins

No. 1 (collector) and No. 2 (emitter)

facing the perforations

5擄

* Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

擄

C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

5

3

2

10

30

150

鈥?5 to +150

V

V

V

mA

mW

擄C

擄C

CAUTION;

This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12102EJ2V0DS00 (2nd edition)

(Previous No. TC-2475)

Date Published November 1996 N

Printed in Japan

漏

0.4

鈥?.05

+0.1

(1.9)

ORDERING INFORMATION

3

+0.1

鈥?4-pin Mini-Mold package

2.8

鈥?.3

+0.2

1.5

鈥?.1

+0.2

T84

1994

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