Transistor
2SC5018
Silicon NPN triple diffusion planer type
For high breakdown voltage high-speed switching
Unit: mm
6.9鹵0.1
0.15
1.05 2.5鹵0.1
鹵0.05
(1.45)
0.8
0.5
4.5鹵0.1
0.7
4.0
s
Features
q
q
0.65 max.
1.0 1.0
High collector to base voltage V
CBO
.
High emitter to base voltage V
EBO
.
0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25藲C)
Ratings
500
400
7
1.5
0.8
1
150
鈥?5 ~ +150
Unit
0.45
鈥?.05
0.45
鈥?.05
+0.1
+0.1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
2.5鹵0.5
1
2
2.5鹵0.5
3
V
V
A
A
W
藲C
藲C
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2.5鹵0.1
V
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fill time
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 500V, I
E
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 300mA
*1
I
C
= 100mA, I
B
= 10mA
*1
I
C
= 100mA, I
B
= 10mA
*1
V
CB
= 10V, I
E
= 鈥?0mA, f = 10MHz
I
C
= 200mA, I
B1
= 40mA
I
B2
= 鈥?0mA, V
CC
= 150V
50
10
0.1
0.8
20
0.7
4.0
0.4
*1
min
typ
max
100
100
300
14.5鹵0.5
Unit
碌A(chǔ)
碌A(chǔ)
0.5
1.0
V
V
MHz
碌s
碌s
碌s
Pulse measurement
1
1
2
