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DATA SHEET

SILICON TRANSISTOR

2SC5014

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS SUPER MINI MOLD

FEATURES

鈥?Small Package

鈥?High Gain Bandwidth Product (f

T

= 12 GHz TYP.)

鈥?Low Noise, High Gain

鈥?Low Voltage Operation

2.1 鹵 0.2

1.25 鹵 0.1

PACKAGE DIMENSIONS

in millimeters

ORDERING INFORMATION

2

3

2.0 鹵 0.2

PART

NUMBER

2SC5014-T1

0.65

0.3

+0.1

鈥?.05

0.15

+0.1

鈥?.05

0.3

+0.1

鈥?.05

(1.3)

0.3 0.4

+0.1

鈥?.05

(1.25)

QUANTITY

3 Kpcs/Reel.

PACKING STYLE

Embossed tape 8 mm wide.

Pin3 (Base), Pin4 (Emitter) face to

perforation side of the tape.

0.60

0.3

+0.1

鈥?.05

1

2SC5014-T2

3 Kpcs/Reel.

*

Please contact with responsible NEC person, if you require

evaluation sample. Unit sample quantity shall be 50 pcs.

(Part No.: 2SC5014)

0 to 0.1

0.9 鹵 0.1

Embossed tape 8 mm wide.

Pin1 (Collector), Pin2 (Emitter) face

to perforation side of the tape.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

9

6

2

10

60

150

鈥?5 to +150

V

V

V

mA

mW

藲C

藲C

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

Caution; Electrostatic Sensitive Device.

Document No. P10393EJ2V0DS00 (2nd edition)

(Previous No. TD-2414)

Date Published August 1995 P

Printed in Japan

漏

4

1993

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