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DATA SHEET

SILICON TRANSISTOR

2SC5012

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS SUPER MINI MOLD

FEATURES

鈥?Small Package

鈥?High Gain Bandwidth Product (f

T

= 9 GHz TYP.)

鈥?Low Noise, High Gain

鈥?Low Voltage Operation

0.3

+0.1

鈥?.05

PACKAGE DIMENSIONS

in millimeters

2.1 鹵 0.2

1.25 鹵 0.1

0.3

+0.1

鈥?.05

(LEADS 2, 3, 4)

(1.3)

ORDERING INFORMATION

2.0 鹵 0.2

0.60 0.65

XYZ

1

4

2SC5012-T1

3 Kpcs/Reel.

perforation side of the tape.

2SC5012-T2

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin1 (Collector), Pin2 (Emitter) face

to perforation side of the tape.

0.9 鹵 0.1

0.3

Embossed tape 8 mm wide.

Pin 3 (Base), Pin 4 (Emitter) face to

0.4

+0.1

鈥?.05

0 to 0.1

*

Please contact with responsible NEC person, if you require

evaluation sample. Unit sample quantity shall be 50 pcs.

(Part No.: 2SC5012)

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

20

10

1.5

65

150

150

鈥?5 to +150

V

V

V

mA

mW

藲C

藲C

Caution; Electrostatic Sensitive Device.

Document No. P10400EJ2V0DS00 (2nd edition)

(Previous No. TD-2412)

Date Published July 1995 P

Printed in Japan

漏

0.3

+0.1

鈥?.05

0.15

+0.1

鈥?.05

PART

NUMBER

QUANTITY

PACKING STYLE

(1.25)

2

3

1993

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