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DATA SHEET

SILICON TRANSISTOR

2SC5010

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from

VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and

excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an

NEC proprietary fabrication technique.

FEATURES

鈥?Low Voltage Use.

鈥?High f

T

鈥?Low C

re

鈥?Low NF

: 12.0 GHz TYP. (@ V

CE

= 3 V, I

C

= 10 mA, f = 2 GHz)

: 0.4 pF TYP. (@ V

CE

= 3 V, I

E

= 0, f = 1 MHz)

: 1.5 dB TYP. (@ V

CE

= 3 V, I

C

= 3 mA, f = 2 GHz)

2

1.6 鹵 0.1

1.0

0.2

+0.1

鈥?

0.5

0.3

+0.1

鈥?

0.15

+0.1

鈥?.05

PACKAGE DIMENSIONS

in milimeters

1.6 鹵 0.1

0.8 鹵 0.1

鈥?High |S

21e

|

2

: 8.5 dB TYP. (@ V

CE

= 3 V, I

C

= 10 mA, f = 2 GHz)

鈥?Ultra Super Mini Mold Package.

0.5

ORDERING INFORMATION

PART

NUMBER

2SC5010

2SC5010-T1

3

1

QUANTITY

50 pcs/Unit.

3 kpcs/Reel.

PACKING STYLE

Embossed tape 8 mm wide.

Pin3(Collector) face to perforation side

of the tape.

0.75 鹵 0.05

0.6

*

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

9

6

2

30

125

150

鈥?5 to +150

V

V

V

mA

mW

藲C

藲C

1. Emitter

2. Base

3. Collector

Document No. P10389EJ2V0DS00 (2nd edition)

(Previous No. TD-2401)

Date Published July 1995 P

Printed in Japan

0 to 0.1

漏

1993

next

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