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DATA SHEET

SILICON TRANSISTOR

2SC5008

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5008 is an NPN epitaxial silicon transistor designed for use

in low noise and small signal amplifiers from VHF band to L band. Low

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride

passivated base surface, process (NEST2 process) which is an NEC

proprietary fabrication technique.

PACKAGE DIMENSIONS

in millimeters

1.6 鹵 0.1

0.8 鹵 0.1

2

0.5

1.6 鹵 0.1

1.0

0.2

+0.1

鈥?

0.3

+0.1

鈥?

0.15

+0.1

鈥?.05

0.5

FEATURES

鈥?Low Voltage Use.

鈥?High f

T

: 8.0 GHz TYP. (@ V

CE

= 3 V, I

C

= 5 mA, f = 2 GHz)

鈥?Low NF: 1.9 dB TYP. (@ V

CE

= 3 V, I

C

= 5 mA, f = 2 GHz)

鈥?High |S

21e

|

2

: 7.5 dB TYP. (@ V

CE

= 3 V, I

C

= 5 mA, f = 2 GHz)

鈥?Ultra Super Mini Mold Package.

鈥?Low C

re

: 0.3 pF TYP. (@ V

CE

= 3 V, I

E

= 0, f = 1 MHz)

3

1

0.75 鹵 0.05

0.6

ORDERING INFORMATION

PART

NUMBER

2SC5008

2SC5008-T1

1. Emitter

2. Base

3. Collector

PACKING STYLE

QUANTITY

50 pcs./Unit

3 kpcs./Reel

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation side

of the tape.

*

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

20

10

1.5

35

125 mW

150

鈥?5 to + 150

藲C

藲C

V

V

V

mA

Document No. P10387EJ2V0DS00 (2nd edition)

(Previous No. TD-2433)

Date Published July 1995 P

Printed in Japan

0 to 0.1

漏

1993

next

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