Transistor
2SC4835
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
2.1鹵0.1
s
Features
q
q
q
q
0.425
1.25鹵0.1
0.425
Low noise figure NF.
High gain.
High transition frequency f
T
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0鹵0.2
1.3鹵0.1
0.65
3
2
0.2
0.9鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
15
10
2
80
150
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
0.7鹵0.1
0 to 0.1
0.2鹵0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
3M
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
h
FE
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 2V, I
C
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 100碌A(chǔ), I
B
= 0
V
CE
= 8V, I
C
= 20mA
*
V
CE
= 8V, I
C
= 15mA, f = 800MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 15mA, f = 800MHz
V
CE
= 8V, I
C
= 15mA, f = 800MHz
V
CE
= 8V, I
C
= 7mA, f = 800MHz
11
15
10
50
5
150
6
0.7
14
15
1.3
*
min
typ
max
1
1
0.15
鈥?.05
+0.1
0.3
鈥?
+0.1
Unit
碌A(chǔ)
碌A(chǔ)
V
V
200
GHz
1.2
pF
dB
dB
2
dB
Pulse measurement
1
1
2
