Transistor
2SC4809
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Unit: mm
1.6鹵0.15
s
Features
q
q
0.4
0.8鹵0.1
0.4
0.2
鈥?.05
0.15
鈥?.05
+0.1
q
High transition frequency f
T
.
Small collector output capacitance C
ob
and common base reverse
transfer capacitance C
rb
.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
1.6鹵0.1
1.0鹵0.1
0.5
1
0.5
3
2
0.45鹵0.1 0.3
0.75鹵0.15
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
15
10
3
50
125
125
鈥?5 ~ +125
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?5
SS鈥揗ini Type Package
Marking symbol :
1S
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Base time constant
Common emitter reverse transfer capacitance
h
FE
ratio
(Ta=25藲C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
r
bb
' 路 C
C
C
rb
Conditions
V
CB
= 10V, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 4V, I
C
= 5mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 4V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= 鈥?mA, f = 31.9MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CE
= 4V, I
C
= 100碌A(chǔ)
V
CE
= 4V, I
C
= 5mA
0.75
1.4
1.9
1.4
11
0.45
1.6
10
3
75
400
0.5
2.7
V
GHz
pF
PS
pF
min
typ
max
1
Unit
碌A(chǔ)
V
V
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
P
75 ~ 130
1SP
Q
110 ~ 220
1SQ
R
200 ~ 400
1SR
0 to 0.1
0.2鹵0.1
+0.1
1
1
2
3
