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2SC4783 Datasheet

  • 2SC4783

  • NPN SILICON EPITAXIAL TRANSISTOR

  • 4頁

  • NEC   NEC

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DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
2SC4783
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
PACKAGE DRAWING (Unit: mm)
0.3 鹵 0.05
0.1
+0.1
鈥?.05
FEATURES
1.6 鹵 0.1
0.8 鹵 0.1
鈥?/div>
High DC current gain: h
FE2
= 200 TYP.
鈥?/div>
High voltage: V
CEO
= 50 V
3
0 to 0.1
2
0.2
+0.1
鈥?
0.5
0.5
0.6
0.75 鹵 0.05
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Note1
Note2
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
P
T
T
j
T
stg
60
50
5.0
100
200
200
150
鈥?5 to + 150
V
V
V
mA
mA
mW
擄C
擄C
1.0
1.6 鹵 0.1
Total Power Dissipation (T
A
= 25擄C)
Junction Temperature
Storage Temperature Range
1: Emitter
2: Base
3: Collector
Notes 1.
PW
鈮?/div>
10 ms, Duty Cycle
鈮?/div>
50%
2
2.
When mounted on ceramic substrate of 3.0 cm x 0.64 mm
ELECTRICAL CHARACTERISTICS (T
A
= 25擄C)
CHARACTERISTICS
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Note
SYMBOL
I
CBO
I
EBO
h
FE1
h
FE2
TEST CONDITIONS
V
CB
= 60 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
V
CE
= 6.0 V, I
C
= 0.1 mA
V
CE
= 6.0 V, I
C
= 1.0 mA
V
CE
= 6.0 V, I
C
= 1.0 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 100 mA, I
B
= 10 mA
V
CE
= 6.0 V, I
E
=
鈭?0
mA
V
CE
= 6.0 V, I
E
= 0, f = 1.0 MHz
MIN.
TYP.
MAX.
100
100
UNIT
nA
nA
鈭?/div>
50
90
200
0.62
0.15
0.86
150
250
3.0
4.0
0.3
1.0
600
鈭?/div>
V
V
V
MHz
pF
Base to Emitter Voltage
Note
Note
V
BE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Collector Saturation Voltage
Base Saturation Voltage
Gain Bandwidth Product
Output Capacitance
Note
Note
Pulsed: PW
鈮?/div>
350
碌
s, Duty Cycle
鈮?/div>
2%
h
FE
CLASSFICATION
Marking
h
FE2
L4
90 to 180
L5
135 to 270
L6
200 to 400
L7
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D15616EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
漏
2001

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