Transistor
2SC4782
Silicon NPN epitaxial planer type
For high speed switching
Unit: mm
s
Features
q
q
q
2.8
鈥?.3
0.65鹵0.15
+0.2
1.5
鈥?.05
+0.25
0.65鹵0.15
2
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CES
V
EBO
I
CP
I
C
P
C
T
j
T
stg
25
20
5
300
200
200
150
鈥?5 ~ +150
V
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
DV
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
Refer to the measurment circuit
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
200
40
0.17
0.76
500
2
17
15
7
4
min
typ
max
0.1
0.1
200
0.25
1.0
V
V
MHz
pF
ns
ns
ns
Unit
碌A
碌A
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
P
40 ~ 80
DVP
Q
60 ~ 120
DVQ
R
90 ~ 200
DVR
0 to 0.1
Parameter
Symbol
Ratings
Unit
0.1 to 0.3
0.4鹵0.2
0.8
(Ta=25藲C)
1.1
鈥?.1
s
Absolute Maximum Ratings
0.16
鈥?.06
+0.2
+0.1
0.4
鈥?.05
High-speed switching.
Low collector to emitter saturation voltage V
CE(sat)
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.95
2.9
鈥?.05
1
1.9鹵0.2
+0.2
0.95
3
+0.1
1.45
1
1
2
