2SC4738FT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4738FT
Audio Frequency General Purpose Amplifier Applications
Unit: mm
High Voltage: V
CEO
= 50 V
High Current: I
C
= 150 mA (max)
High h
FE
: h
FE
= 120 to 400
Excellent h
FE
Linearity
: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
路
Complementary to 2SA1832FT
路
路
路
路
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60
50
5
150
30
100
125
-55
to 125
Unit
V
V
V
mA
mA
mW
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-1B1A
Marking
Type Name
h
FE
Rank
LY
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat)
f
T
C
ob
Test Condition
V
CB
=
60 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
6 V, I
C
=
2 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
10 V, I
C
=
1 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
戮
戮
120
鈥?/div>
80
戮
Typ.
戮
戮
戮
0.1
戮
2.0
Max
0.1
0.1
400
0.25
戮
3.5
V
MHz
pF
Unit
mA
mA
Note: h
FE
Classification
(
) Marking symbol
Y (Y): 120 to 240, GR (G): 200 to 400
1
2002-01-16
1
2
3
