Transistor
2SC4691
Silicon NPN epitaxial planer type
For high speed switching
Unit: mm
1.6鹵0.15
s
Features
q
q
q
0.4
0.8鹵0.1
0.4
0.2
鈥?.05
0.15
鈥?.05
+0.1
High-speed switching.
Low collector to emitter saturation voltage V
CE(sat)
.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
1.6鹵0.1
1.0鹵0.1
0.5
1
0.5
3
2
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
40
40
5
300
100
125
125
鈥?5 ~ +125
Unit
V
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?5
SS鈥揗ini Type Package
Marking symbol :
2Y
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
Refer to the measurment circuit
Conditions
V
CB
= 15V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
450
2
17
17
10
6
60
0.17
min
typ
max
0.1
0.1
200
0.25
1.0
V
V
MHz
pF
ns
ns
ns
Unit
碌A
碌A
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
Q
60 ~ 120
2YQ
R
90 ~ 200
2YR
0 to 0.1
0.2鹵0.1
+0.1
(Ta=25藲C)
0.45鹵0.1 0.3
0.75鹵0.15
s
Absolute Maximum Ratings
1
1
2
