Transistor
2SC4626
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1790
1.6鹵0.15
Unit: mm
s
Features
q
q
q
0.4
0.8鹵0.1
0.4
0.2
鈥?.05
0.15
鈥?.05
+0.1
Optimum for RF amplification of FM/AM radios.
High transition frequency f
T
.
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
1.6鹵0.1
1.0鹵0.1
0.5
1
0.5
3
2
0.45鹵0.1 0.3
0.75鹵0.15
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
30
20
5
30
125
125
鈥?5 ~ +125
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?5
SS鈥揗ini Type Package
Marking symbol :
V
s
Electrical Characteristics
Parameter
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
(Ta=25藲C)
Symbol
I
CBO
h
FE*
f
T
NF
Z
rb
C
re
Conditions
V
CB
= 10V, I
E
= 0
V
CB
= 10V, I
E
= 鈥?mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 5MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 2MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 10.7MHz
70
150
250
2.8
22
0.9
4
50
1.5
min
typ
max
0.1
220
MHz
dB
鈩?/div>
pF
Unit
碌A(chǔ)
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
B
70 ~ 140
VB
C
110 ~ 220
VC
0 to 0.1
0.2鹵0.1
+0.1
1
1
2
3
