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2SC4342M Datasheet

  • 2SC4342M

  • TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 3A I(C...

  • 6頁(yè)

  • ETC

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DATA SHEET
SILICON POWER TRANSISTOR
2SC4342
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SC4342 is a high-speed Darlington power transistor.
This transistor is ideal for high-precision control such as PWM
control for pulse motors or blushless motor of OA and FA equipment.
ORDERING INFORMATION
Part No.
2SC4342
Package
TO-126
FEATURES
鈥?On-chip C-to-E reverse diode
鈥?Fast switching speed
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
T
A
= 25擄C
T
C
= 25擄C
PW
鈮?/div>
10 ms,
duty cycle
鈮?/div>
50%
Conditions
Ratings
150
100
8.0
鹵3.0
鹵5.0
0.3
1.3
12
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14862EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998

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