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2SC4331M Datasheet

  • 2SC4331M

  • TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-251VAR

  • 6頁(yè)

  • ETC

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DATA SHEET
SILICON POWER TRANSISTORS
2SC4331, 2SC4331-Z
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4331 and 2SC4331-Z are mold power transistors
developed for high-speed switching and features a very low
collector-to-emitter saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
PACKAGE DRAWING (UNIT: mm)
FEATURES
鈥?Available for high-current control in small dimension
鈥?Z type is a lead-processed product and is deal for mounting a
hybrid IC.
鈥?Low collector saturation voltage
V
CE(sat)
= 0.3 V MAX. (@I
C
= 3 A)
鈥?Fast switching speed:
t
f
鈮?/div>
0.4
碌
s MAX. (@I
C
= 3 A)
鈥?High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (T
A
= 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Base to emitter voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(T
C
= 25擄C)
P
T
(T
A
= 25擄C)
T
j
T
stg
Ratings
150
100
7.0
5.0
10
2.5
15
1.0**, 2.0***
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
W
擄C
擄C
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Fin (collector)
*
PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50%
** Printing board mounted
2
*** 7.5 mm
脳
0.7 mm, ceramic board mounted
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16136EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998

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