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2SC4094 Datasheet

  • 2SC4094

  • MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSIST...

  • 8頁

  • NEC   NEC

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DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC4094
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4094 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity.
proprietary new fabrication technique.
This achieved by direct nitride
2.9鹵0.2
(1.8)
0.85 0.95
PACKAGE DIMENSIONS
(Units: mm)
0.4
鈭?.05
0.4
鈭?.05
0.16
5擄
+0.1
鈭?.06
2.8
鈭?.3
+0.2
1.5
鈭?.1
2
3
4
5擄
0 to 0.1
+0.2
+0.1
passivated base surface process (DNP process) which is an NEC
+0.1
FEATURES
鈥?NF = 1.2 dB TYP. @f = 1.0 GHz, V
CE
= 8 V, I
C
= 7 mA
鈥?/div>

S
21e

2
= 15 dB TYP. @f = 1.0 GHz, V
CE
= 8 V, I
C
= 20 mA
1
0.6
鈭?.05
+0.1
5擄
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
10
1.5
65
200
150
V
V
V
mA
mW
1.1
鈭?.1
0.8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25

C)
+0.2
5擄

65 to +150

C

C
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
ELECTRICAL CHARACTERISTICS (T
A
= 25

C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
50
9
0.25
13
15
17
1.2
2.0
0.8
MIN.
TYP.
MAX.
1.0
1.0
250
GHz
pF
dB
dB
dB
UNIT
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 8V, I
C
= 20 mA
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 8 V, I
C
= 7 mA, f = 1.0 GHz

A

A

S
21e

2
MAG
NF
h
FE
Classification
Class
Marking
h
FE
R36/RCF *
R36
50 to 100
R37/RCG *
R37
80 to 160
R38/RCH *
R38
125 to 250
* Old Specification / New Specification
Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
漏
0.4
+0.1
鈭?.05
(1.9)
1987

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