DATA SHEET
SILICON TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4092 is an NPN silicon epitaxial transistor designed for low-
noise amplifier at VHF, UHF band.
It is contained in 4 pins mini-mold package which enables high-isolation
gain.
PACKAGE DIMENSIONS
(Units: mm)
0.4
鈭?.05
0.4
鈭?.05
0.16
5擄
+0.1
鈭?.06
2.8
鈭?.3
+0.2
1.5
鈭?.1
2
3
4
5擄
0 to 0.1
+0.2
+0.1
鈥?NF = 1.5 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 5 mA
鈥?/div>
錚
21e
錚?/div>
2
= 12 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 20 mA
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
25
12
3.0
70
200
150
鈭?5
to +150
V
V
mA
mW
擄C
擄C
1.1
鈭?.1
0.8
0.6
鈭?.05
+0.1
5擄
V
+0.2
5擄
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
ELECTRICAL CHARACTERISTICS (T
A
= 25
擄C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Insertion Power Gain
Noise Figure
Maximum Available Gain
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
ob
錚
21e
錚?/div>
2
NF
MAG
9.5
40
6
0.55
12
1.5
14.5
3.0
0.9
MIN.
TYP.
MAX.
0.1
0.1
200
GHz
pF
dB
dB
dB
UNIT
TEST CONDITIONS
V
CB
= 15 V, I
E
= 0
V
EB
= 2.0 V, I
C
= 0
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA f = 1.0 GHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
碌
A
碌
A
h
FE
Classification
Class
Marking
h
FE
R4/RD *
R4
40 to 120
R5/RE *
R5
100 to 200
* Old Specification / New Specification
Document No. P10363EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
漏
0.4
+0.1
鈭?.05
(1.9)
FEATURES
2.9鹵0.2
(1.8)
0.85 0.95
+0.1
1987
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