Transistor
2SC3939
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA1533
5.0鹵0.2
4.0鹵0.2
Unit: mm
q
q
q
High collector to emitter voltage V
CEO
.
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
Allowing supply with the radial taping.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
80
80
5
1
0.5
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
1 2 3
2.54鹵0.15
1.27
0.45
鈥?.1
1.27
+0.15
13.5鹵0.5
0.7鹵0.1
0.7鹵0.2
8.0鹵0.2
s
Features
0.45
鈥?.1
+0.15
2.3鹵0.2
1:Emitter
2:Collector
3:Base
TO鈥?2NL Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 100碌A(chǔ), I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
80
80
5
130
50
100
0.2
0.85
120
11
*2
min
typ
max
0.1
Unit
碌A(chǔ)
V
V
V
330
0.4
1.2
V
V
MHz
20
pF
Pulse measurement
*1
h
FE1
Rank classification
R
130 ~ 220
S
185 ~ 330
Rank
h
FE1
1
1
2
3
4
